Pis’ma v ZhETF, vol. 109, iss. 4, pp. 254 - 255
© 2019
February 25
On-chip piezoelectric actuation of nanomechanical resonators
containing a two-dimensional electron gas
A. A. Shevyrin+1), A. K. Bakarov+∗, A. A. Shklyaev+∗, A. S. Arakcheev∗×, M. Kurosu◦∇, H. Yamaguchi◦∇,
A. G. Pogosov+∗
+Rzhanov Institute of Semiconductor Physics Siberian Branch of the Russian Academy of Sciences,
630090 Novosibirsk, Russia
Novosibirsk State University, 630090 Novosibirsk, Russia
×Budker Institute of Nuclear Physics Siberian Branch of the Russian Academy of Sciences,
630090 Novosibirsk, Russia
NTT Basic Research Laboratories, Atsugi-shi, 243-0198 Kanagawa, Japan
Department of Physics, Tohoku University, 980-8578 Sendai, Japan
Submitted 5 December 2018
Resubmitted 7 December 2018
Accepted 7 December 2018
DOI: 10.1134/S0370274X19040106
Micro- and nanomechanical resonators provide a
lengths L are 8 and 10 µm, respectively. Thicknesses h
versatile platform for creation of various sensors [1]
of both resonators are 166 nm. The width of the res-
and for fundamental studies [2]. Their downsizing can
onators equals W0 = 2 µm near the clampings. During
be desirable, but it often complicates the actuation.
the experiment, the samples were placed in a vacuum
Among the piezoelectric materials used for fabrica-
chamber with optical access. Amplitude and phase of
tion of nanomechanical resonators, especially inter-
the vibrations were measured using a Doppler vibrom-
esting are the AlGaN/GaN and AlGaAs/GaAs [3-5]
eter combined with a vector signal analyzer. The vibra-
heterostructures containing a two-dimensional electron
tions were piezoelectrically driven by application of an
gas (2DEG). These systems are integrable with high-
ac voltage between the top gate and the 2DEG.
electron-mobility transistors within a single chip. More-
Figure 1c, d shows the measured frequency depen-
over, at low temperatures, the coupling between me-
dences of the amplitude of flexural vibrations. The ex-
chanical motion and electron transport makes it pos-
perimentally measured responsivities (u0/V0)exp, i.e.,
sible to study the transport phenomena under unusual
the ratios of the resonant amplitude u0 to the driv-
conditions and to trace electron-transport processes by
ing voltage V0 are 790 nm/V for the cantilever and
precise measuring the change in the resonant frequency
20 nm/V for the bridge. When V0 increases, the resonant
[4], thus widening the range of existing experimental
curves characterizing the bridge are tilted to the left (see
techniques. Previously, the piezoelectric actuation has
the inset in Fig. 1d), indicating softening nonlinearity.
been successfully used [4,5] for driving the flexural vi-
This behavior is typical for buckled and bent bridges
brations of micromechanical AlGaAs/GaAs-based res-
[3], while initially straight bridges usually demonstrate
onators with a 2DEG. In the present paper, we experi-
hardening due to the beam elongation at high ampli-
mentally show that this technique is suitable for driving
tudes. Figure 1e, f shows the amplitude and phase cor-
flexural and torsional vibrations of smaller (0.166 nm-
responding to the second vibrational mode of the can-
thick) resonators in the MHz frequency range at room
tilever. The presented data confirm that the observed
temperature. We also show that, due to the buckling and
mode is torsional.
static bending of axially-loaded thin resonators, their
The maximal expected amplitude of flexural vibra-
piezoelectric actuation has important features which
tions u0 and its ratio to the voltage amplitude V0 can
should be taken into account for the driving to remain
be estimated as
effective.
(u0)
e14Q
,
(1)
We studied two types of resonators, namely, a can-
V0
ρL2Ω2
theor
0
tilever and a bridge shown in Fig. 1a, b. Their total
where the non-dmen∕∫al coefficient α is
1
1 W(x)
(x)
(x)
α=
Ψ2
d
(2)
1)e-mail: shevandrey@isp.nsc.ru
8 d(x/L)
W0
L
L
x=Lg
0
254
Письма в ЖЭТФ том 109 вып. 3 - 4
2019
On-chip piezoelectric actuation of nanomechanical resonators. . .
255
to the frequency, rather than by mechanical effects. This
attenuation is caused by finite resistance of the contacts
and 2DEG, as well as by the distributed parasitic ca-
pacitance between the gate and the 2DEG, which tends
to equalize their electrical potentials. The obtained ef-
ficiencies can be considered as high in comparison to
those derived from the existing papers [5].
The buckling of the bridge affects the vibrations. As
shown in inset in Fig. 1h, the static bending changes the
modal shape Ψ(xL ) included in Eq. (2). At a moderate
axial load T, the shape of the fundamental mode has
one peak at the beam center. According to Eq. (2), the
gate ending at the center, wheredΨdx = 0, cannot drive
the vibrations, since the bending moments piezoelectri-
cally induced in the oppositely curved regions cancel
each other. At a large T, the modal shape becomes a
function with two peaks. If the gate ends at these two
additional points, the vibrations are also suppressed.
The estimated longitudinal compression in our case is
T ≈ 1.2Tcr. The solid black line Fig.1g shows coefficient
α calculated as a function of T. It can be seen that, at
this compression, α is reduced by only 6 % in compari-
son to the case of a non-compressed beam. Thus, in our
case, the buckling influence is small and can be neglected
when estimating the actuation efficiency. However, it
would be of great importance for long and thin beams
which buckle at small critical load Tcr. Figure 1h shows
the optimal Lg maximizing the vibrations. The dashed
red line in Fig.1g shows the corresponding α values. It
can be seen that the gate shortening makes it possible
Fig. 1. (Color online) Images of the studied cantilever (a)
to largely eliminate the buckling-induced suppression.
and bridge (b). Below (c), (d) are the corresponding ampli-
The work is partially supported by Russian Foun-
tudes of the piezoelectrically-driven flexural vibrations. At
dation for Basic Research grant # 16-32-60130, State
the driving voltage of 400 mV, the doubly-clamped beam
Programme (Grant
#0306-2016-0015) and MEXT
demonstrates softening nonlinearity indicating buckling
Grant-in-Aid for Scientific Research on Innovative
(see the inset in (d)). Amplitude (e) and phase (f) of the
Areas “Science of hybrid quantum systems” (Grant #
cantilever torsional vibrations. (g) - The dependence of co-
JP15H05869 and JP15K21727). The theoretical part of
efficient α determining the vibrations amplitude on com-
work is supported by Russian Science Foundation grant
pression. The solid black curve corresponds to gate length
#18-72-10058.
Lg = L/4, and the dashed red curve is calculated for op-
Full text of the paper is published in JETP Letters
timal Lg(T ) values, shown in (h)
journal. DOI: 10.1134/S0021364019040052
Here e14 is the piezoelectric constant, Q is the qual-
1. J. Chaste, A. Eichler, J. Moser, G. Ceballos, R. Rurali,
ity factor, L is the resonator length, Ω0 is the resonant
and A. Bachtold, Nat. Nanotechnol. 7, 301 (2012).
frequency, Ψ(x) is the normalized mode shape and W
2. K. Moskovtsev and M. I. Dykman, Phys. Rev. B 95,
is the resonator width. These equations give estimates
085426 (2017).
u0/V0
= 1800 nmV-1 and 160 nmV-1 for cantilever
3. A. A. Shevyrin, A. G. Pogosov, M. V. Budantsev,
A. K. Bakarov, A. I. Toropov, S. V. Ishutkin, E. V. Shes-
and bridge, respectively. Comparing these values with
terikov, and A. S. Arakcheev, Appl. Phys. Lett. 103,
the experimentally measured responsivities, we obtain
131905 (2013).
the actuation efficiencies 13 % for the bridge and 44 %
4. Y. Okazaki, I. Mahboob, K. Onomitsu, S. Sasaki, and
for the cantilever. Their ratio is close to the resonant fre-
H. Yamaguchi, Nat. Commun. 7, 11132 (2016).
quencies inverse ratio. This speaks in favour of the fact
5. I. Mahboob, N. Perrissin, K. Nishiguchi, D. Hatanaka,
that the efficiency is largely determined by the driving
Y. Okazaki, A. Fujiwara, and H. Yamaguchi, Nano Lett.
voltage attenuation which should be also proportional
15, 2312 (2015).
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2019