Pis’ma v ZhETF, vol. 115, iss. 10, pp. 611 - 612

May 25

Enhancement of the basal-plane stacking fault emission in GaN planar

nanowire microcavity

E. I. Girshova⁺¹⁾, G. Pozina^∗, A. V. Belonovskii⁺, M. I. Mitrofanov^×◦, I. V. Levitskii^×◦, G. V. Voznyuk⁺,

V. P. Evtikhiev^∗, S. N. Rodin^×◦, M. A. Kaliteevski⁺

⁺ITMO University, 197101 St. Petersburg, Russia

^∗Department of Physics, Chemistry and Biology (IFM), Linköping University, S-581 83 Linköping, Sweden

^×Submicron Heterostructures for Microelectronics, Research and Engineering Center, Russian Academy of Sciences,

194021 St. Petersburg, Russia

^◦Ioffe Institute, 194021 St. Petersburg, Russia

Submitted 5 April 2022

Resubmitted 12 April 2022

Accepted 13

April 2022

DOI: 10.31857/S1234567822100032, EDN: dyimlt

Optical microcavities based on semiconductor pla-

An increase in the excitation power P leads to a

nar nanostructures attract significant interest due to a

super-linear growth of the integrated intensity I ∼ P^1.9

relative simplicity of growth [1-4].

for the SF1 emission compared to the SF2 line, for which

We have studied microcavities based on GaN nanos-

the dependence of the integrated PL intensity shows

tructures grown using a “bottom-up” approach [5, 6].

nearly linear growth on pumping I ∼ P^1.1 (Fig. 1с).

Near the perfect shape of structures grown by selective

Studies of time-resolved PL have revealed that the

area metal-organic vapor phase epitaxy (MOVPE) on

SF1 and SF2 emissions have opposite temporal behav-

sapphire (0 0 0 1) allowed the formation of cavity modes

ior with the variation of the excitation power. The es-

and the enhancement of the spontaneous emission in-

timated PL decay time is plotted as a function of the

tensity [7, 8]. In such microcavities, the exciton is con-

pumping power in Fig. 1d for the PL lines SF1 and SF2

sidered as “bulk”, (not confined in the active layer in

by solid triangles and circles, respectively. Clearly, the

difference from the microcavities with DBR). Exciton-

recombination time is shorter for the SF1 emission com-

cavity modes coupling conditions are different for these

pared to the SF2 line. As the excitation power increases,

resonators.

τ increases for the SF1 line from ∼ 30 to ∼ 100 ps while,

We compare microcavities formed by GaN nanowires

in contrast, τ decreases from ∼1100 to ∼ 500 ps for the

with structural defects (basal-plane stacking faults

SF2 emission.

(SFs)) and without them and observe different behavior

Interaction of exciton and cavity modes can occur in

of the PL intensity and PL decay time with increasing

microcavities of various types; the resonator size should

excitation power for the exciton localized at SFs com-

be significantly smaller than the wavelength to pro-

pared to the bulk exciton.

vide a large energy interval between the microcavity

Figure 1a shows the end of a uniform flat GaN

modes [10]. The studied planar GaN NWs have width

nanowire. The structures may have structural defects

and length of ∼ 7 and ∼ 110 µm, respectively, and, thus,

such as SFs. The low-temperature CL spectra shown in

possess properties of so-called meso-cavity when the

Figs. 1b were taken at different points of the nanowire

size of the resonator corresponds to tens of wavelengths

along the line as shown in Fig. 1a. Panchromatic CL

[11, 12]. The field distribution for the cavity modes was

shows non-uniformity in the contrast at the edge of

calculated. It is shown that light is well localized at the

the NW, which indicates a presence of structural de-

ends of nanowires.

fect likely SFs. While CL spectra in points 1-3 in

Fig. 1b shows near band gap emission with one domi-

In conclusion, a different behavior of the PL inten-

nant peak at ∼ 3.48 eV, which is typical donor bound

sity and the PL decay time with increasing excitation

exciton (DBE) emission in GaN, the CL spectrum in

power for an exciton localized on a SF as compared to

point 4 demonstrates additional broader emissions at

a bulk exciton is demonstrated. Calculations show good

∼ 3.43 and ∼ 3.35 eV. Similar signatures at ∼ 3.42 eV

localization of the field at the boundary of the structure

and ∼ 3.35 eV in GaN are associated with the emissions

in the region of the exciton energy.

related to the basal plane SFs of type I1 and I2 [9,10].

The work has been supported by the Russian Sci-

ence Foundation # 21-12-00304. The work is financially

¹⁾e-mail: ilinishna@gmail.com

supported by Priority 2030 program.

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611

5^∗

612

E. I. Girshova, G. Pozina, A. V. Belonovskii et al.

Fig. 1. (Color online) (a) - Bird-view SEM image showing end of the nanowire measured simultaneously by SEM. (b) -

Normalized CL spectra taken at 5 K at different points along the line shown in (a) and labeled by corresponding numbers.

Spectra are shifted vertically for clarity. (c) - Dependence of the integrated PL intensity for the SF1 and SF2 emissions on

the excitation power. (d) - PL decay time extracted from the PL decay curves shown as a function of the excitation power

for the SF1 and SF2 peak emissions by closed triangles and circles, respectively

This is an excerpt of the article

“Enhance-

K. A. Ivanov, S. N. Rodin, K. M. Morozov,

ment of the basal-plane stacking fault emission in

V. P. Evtikhiev, and M. A. Kaliteevski, Status Solidi A

GaN planar nanowire microcavity”. Full text of

217, 1900894 (2020).

the paper is published in JETP Letters journal.

7. G. Pozina, K. A. Ivanov, M. I. Mitrofanov, M. A. Kali-

teevski, K. M. Morozov, I. V. Levitskii, G. V. Voznyuk,

DOI: 10.1134/S0021364022100605

V. P. Evtikhiev, and S. N. Rodin, Status Solidi B 256,

1800631 (2019).

1. A. С. Tamboli, E. D. Haberer, R. Sharma, K. H. Lee,

8. P. P. Paskova, R. Schifano, T. Paskova, T. Malinauskas,

S. Nakamura, and E. L. Hu, Nature Photon. 1,

J. P. Bergman, B. Monemar, S. Figge, and D. Hommel,

(2007).

Physica B 376/377, 473 (2006).

2. T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki,

9. J. Lahnemann, O. Brandt, U. Jahn, C. Pfüller,

Rep. Prog. Phys. 82, 012502 (2019).

C. Roder, P. Dogan, F. Grosse, A. Belabbes, F. Bech-

3. M. S. Kang, C.-H. Lee, J. B. Park, H. Yoo, and G. C. Yi,

stedt, A. Trampert, and L. Geelhaar, Phys. Rev. B 86,

Nano Energy 1, 391 (2012).

081302(R) (2012).

4. C. Berger, A. Dadgar, J. Bläsing, A. Franke, T. Hempel,

10. C. Weisbuch, M. Nishioka, A. Ishikava, and Y. Arakawa,

R. Goldhahn, J. Christen, and A. Krost, Phys. Status

Phys. Rev. Lett. 69(23), 3314 (1992).

Solidi C 9(5), 1253 (2012).

11. A. V. Belonovski, I. V. Levitskii, K. M. Morozov, G. Poz-

5. G. Pozina, A. R. Gubaydullin, M. I. Mitrofanov,

ina, and M. A. Kaliteevski, Opt. Express 28(9), 12688

M. A. Kaliteevski, I. V. Levitskii, G. V. Voznyuk,

(2020).

E. E. Tatarinov, V. P. Evtikhiev, S. N. Rodin, V. N. Kali-

12. A. V. Belonovski, K. M. Morozov, E. I. Girshova, G. Poz-

teevskiy, and L. S. Chechurin, Sci. Rep. 8, 7218 (2018).

ina, and M. A. Kaliteevski, Opt. Express 29(13), 20724

6. G. Pozina, C. Hemmingsson, A. V. Belonovskii,

(2021).

I. V. Levitskii, M. I. Mitrofanov, E. I. Girshova,

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