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Электрохимия, 2022, T. 58, № 7, стр. 421-421

Electrochemical Synthesis of In2Se3 Thin Films from Citrate Bath. Structural, Optical and Morphological Investigations

Oualid Dilmi a, *, Mohamed Benaicha a, **

a Energetic and Solid State Electrochemistry Laboratory, Ferhat Abbas-Setif 1 University
19000 Setif, Algeria

* E-mail: O.dilmi@univ-jijel.dz
** E-mail: mdbenaicha@univ-setif.dz

Поступила в редакцию 26.04.2020
После доработки 10.08.2020
Принята к публикации 31.08.2020

Полный текст (PDF)

Аннотация

In this work, indium selenide In2Se3 thin films were synthesized by electrodeposition in potentiostatic mode from aqueous solution containing InCl3 and SeO2 in acid medium (pH 4.2) with sodium citrate as complexing agent at ambient temperature with heat treatment of electrodeposited films at different temperatures. Voltammetry method was used to investigate the electrochemical behavior of the electrodeposition bath. The structural characterization of elaborate films was performed by X-rays diffraction (XRD) and RAMAN spectroscopy, the morphological one was carried out by Scanning Electron Microscopy (SEM) and atomic force microscopy (AFM), the UV-Visible Spectrophotometry was used to investigate their optical proprieties, whereas the Mott–Schottky measurement was used also to study their semiconducting properties. The results showed that the annealed deposit at 350, 450°C and the as-deposited films take the rhombohedral β‑crystalline phase hR5 of In2Se3, as-deposited and annealed In2Se3 are photoactive thin films with band-gap energies 1.33, 1.55 eV respectively and belong to n-type semiconductors with number of charge carriers in order of 1021/cm3. The obtained deposits have nanometric grain size and less roughness surface.

Keywords: electrodeposition, In2Se3, thin film, citrate bath, semiconductor, energy gap

CONCLUSIONS

Electrodeposition of indium selenide thin films have been studied in thin paper, obtained films were synthetized from an aqueous solution containing InCl3 and SeO2 in acid medium (pH 4.2) at ambient temperature using sodium citrate as complexing agent which serve to approximate the deposition potentials, synthesis process was followed by vacuum annealing of elaborated films. It was concluded that electrodeposited In2Se3 annealed at 350, 450°C and untreated, have the rhombohedral β-phase crystalline structure hR5. As-deposited and annealed In2Se3 are photoactive thin films with band-gap energies 1.33, 1.55 eV respectively and belong to n-type semiconductors with number of charge carriers in the order of 1021/cm3 and composed mainly of In2Se3 nano-grains with low roughness surface.

The recorded results would help us understand the process and the good conditions for electrodeposition of In2Se3 thin films with nano-grains, good adhesion and smooth surface and open up prospects for research on the same axis.

This is an excerpt of the article “Electrochemical Synthesis of In2Se3 Thin Films from Citrate Bath. Structural, Optical and Morphological Investigations.” Full text of the paper is published in Russian J. Electrochemistry, 2021, vol. 57, p. 462.

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